NXP Semiconductors Airfast power amplifier modules for 5G radios

NXP Semiconductors has announced its three latest Airfast power amplifier modules. The devices are fully integrated Doherty power amplifier modules designed for wireless infrastructure applications that demand high performance in a small footprint.

The family of top-side cooled RF amplifier modules features a packaging innovation designed to enable smaller, thinner and lighter radio units, supporting faster and easier deployment of 5G base stations. They are suitable for applications in massive MIMO systems, outdoor small cells and low-power remote radio heads.

The modules are designed for 32T32R, 200 W radios covering 3.3 to 3.8 GHz. They combine NXP’s in-house LDMOS and GaN semiconductor technologies to enable high gain and efficiency with wideband performance, delivering 31 dB gain and 46% efficiency over 400 MHz of instantaneous bandwidth.

The A5M34TG140-TC covers 3300–3670 GHz, the A5M35TG140-TC covers 3400–3600 GHz and the A5M36TG140-TC covers 3400–3800 GHz.