Teledyne e2v DDR4 semiconductors

Teledyne e2v is moving into the mass production phase of its space-grade, radiation-tolerant, DDR4 semiconductors.

With a 4 GB storage capacity and dimensions of 15 x 20 x 1.92 mm, Teledyne e2v’s DDR4s possess high storage density but take up only half the PCB footprint, while delivering data transfer speeds of 2.4 GT/s.

Supplied in a multi-chip package format, each Teledyne e2v DDR4 memory features expansive bus capabilities, where 64 bits are assigned to data transfer and an additional 8 bits for error correction.

Radiation testing showed that their single event latch-up threshold is greater than 60 MeV.cm²/mg. Their single event upset and single event function interrupt data also exceeds 60 MeV.cm²/mg, and they have demonstrated resilience to 100 krad total ionising dose.

The units can be ordered in both industrial temperature range (-40 to 105°C) and military temperature range (-55 to 125°C), and up to NASA Level 1 (based on NASA EEE-INST-002 - Section M4 - PEMs). This will mean that a greater breadth of potential applications can be addressed.