Mitsubishi Electric MGFC45B3436B GaAs FET

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Mitsubishi Electric has developed an internally matched power GaAs FET MGFC45B3436B by using a newly developed FET chip and an internal independently matched circuit to achieve lower distortion levels during low-current operation.

This device, it is claimed, will make WiMax base stations more compact and will improve operational as well as cost performance.

Features include: improved distortion levels during low-current operation by factoring in harmonic components and an FET chip optimised for each frequency band to reduce problems caused by variations in wafer processing and assembly. The low-current, low-distortion design gives the device an adjacent-channel leakage power ratio (ACPR) of -45 dBc, which is 8 dB lower than Mitsubishi’s other models; the same metal-ceramic package used in previous models is used with the same exact dimensions to make replacing existing amplifiers easy.