Freescale Semiconductor AFT05MS031N/AFT09MS031N power transistor range

Thursday, 13 September, 2012 | Supplied by: Wireless Components

Two laterally diffused metal oxide semiconductor power transistors targeting land mobile radio from Freescale Semiconductor, AFT05MS031N and AFT09MS031N, are designed to meet the next generation of voice, video and data services for first responders through the deployment of LTE networks, as well as the interoperability of P25.

The unmatched 12 V devices offer high gain and efficiency over the entire VHF and UHF frequency bands from 136-941 MHz.

For the first time, these 12 V LDMOS transistors incorporate enhanced ruggedness feature of >65:1 VSWR under both overvoltage and 3 dB overdrive conditions, enabling the devices to survive extreme mismatch conditions.

Key features of the AFT05MS031N include: frequency range - 136 to 520 MHz; ruggedness - >65:1 VSWR; output - >31 W; high gain - less than 0.5 W drive for rated output power; >70% efficiency.

Key features of the AFT09MS031N include: frequency range - 764-941 MHz; ruggedness - >65:1 VSWR; output power - >31 W; high gain - less than 0.6 W drive for rated output power; >70% efficiency.

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