NXP Semiconductors MMRF5018HSR5 RF power transistor
NXP Semiconductors’ MMRF5018HSR5 is a 125 W, continuous wave, RF power transistor suitable for wideband operation up to 2700 MHz. The gallium nitride transistor includes input matching for extended bandwidth performance.
Key features include: high power density; decade bandwidth performance; enhanced thermal resistance packaging; power gain of 12 dB; drain efficiency of 64.4% (typ); and high ruggedness >20:1 VSWR.
The product offers a complete solution for multiband communication applications. It is also versatile for a range of CW, pulse and wideband RF applications.
Phone: 001 630 262 6800
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