United Monolithic Semiconductors CHA8612-QDB high power amplifier
The CHA8612-QDB is a gallium nitride on silicon carbide, radio frequency power amplifier from United Monolithic Semiconductors, operating between 7.9 and 11 GHz.
The two-stage high power amplifier provides 18 W (typical) of saturated output power and 40% power-added efficiency. The integrated circuit is manufactured with a GaN HEMT process, 0.25 µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
With linear gain of 26 dB, the product is versatile for a wide range of applications, from military to commercial radar and communication systems.
Phone: 001 630 262 6800
Omnitronics omniGateP25 and omniGateDMR RoIP gateways
Omnitronics' omniGateP25 and omniGateDMR digital radio gateway products, designed to provide...
RuggON SOL 7 12″ rugged Windows tablet for field applications
The RuggON SOL 7 is a 12″ fully rugged Windows tablet powered by Intel Arrow Lake Core...
Qorvo QPA9822 linear 5G high-gain, high-drive amplifier
The amplifier is engineered specifically for 32-node massive multiple-input and multiple-output...
