United Monolithic Semiconductors CHA8612-QDB high power amplifier

Monday, 22 January, 2024 | Supplied by: Richardson RFPD

The CHA8612-QDB is a gallium nitride on silicon carbide, radio frequency power amplifier from United Monolithic Semiconductors, operating between 7.9 and 11 GHz.

The two-stage high power amplifier provides 18 W (typical) of saturated output power and 40% power-added efficiency. The integrated circuit is manufactured with a GaN HEMT process, 0.25 µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

With linear gain of 26 dB, the product is versatile for a wide range of applications, from military to commercial radar and communication systems.

Online: www.richardsonrfpd.com
Phone: 001 630 262 6800
Related Products

STMicroelectronics 100 V trench Schottky rectifier diodes

STMicroelectronics has introduced a range of 100 V trench Schottky rectifier diodes that boost...

Quectel HCM511S high-performance MCU Bluetooth module

Utilising Bluetooth Low Energy 5.4, the module accommodates an ARM Cortex-M33 processor and...

u-blox ALMA-B1 and NORA-B2 Bluetooth LE modules

The ALMA-B1 is a high-end wireless MCU, while the NORA-B2 brings ultralow power to less complex...

  • All content Copyright © 2024 Westwick-Farrow Pty Ltd